Photo-induced Defects in Semiconductors

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Because of this low activa- 55 in silicon with PICTS is so far not successful because these tion energy, the large width of the peak and the position of 56 defects are mostly acting as the main recombination cen- the corresponding wafer in the silicon brick it may be as- 57 ters.

But by improving the sensitivity of a microwave de- cribed to a defect cluster containing nitrogen. The appearance of all tration below the equilibrium value after the excitation is 4 defect peaks differs from the associated brick position. The amount of electrons that can be 6 changes in lifetime, diffusion length and photoconductivity. The activation energy va- 38 ries between 0. Conspicuous is the 40 occurrence of the defect peak in positive and negative form. Peak height 43 which calculates the carrier concentration of the involved and sign correlate to the acceptor concentrations [18].

Samples 44 energy levels by taking all participating generation and re- from series D were undoped, acceptor concentration rising from 45 combination processes as well as trapping and emission A to C. The consideration of the relevant do- properties. Whereas the defect content of as-grown sam- 51 nor and acceptor concentrations along with the concentra- ples depends on their position in the crystal, an equivalent 52 tion of the EL2 defect finally allows for the theoretical re- set of defect levels is prominent in wafer-annealed sam- 53 production of experimental results.

The latter show a de- ples [21]. They differ in 55 the acceptor concentration in the material thus being asso- their characteristic defect levels. Additional negative peaks 56 ciated with the Fermi level position. To briefly summarize occur in some samples for temperatures above K with 57 the theoretical investigations it can be said that the fast re- the amplitude increasing with the crystal length. The observation of MD- in several semiconducting materials.

Photoinduced Emissive Trap States in Lead Halide Perovskite Semiconductors | ACS Energy Letters

Both techniques use 5 PICTS signals of both signs in Fe-doped InP provided the the sensitivity benefit of microwave detection leading to a 6 first direct proof of iron acting as a recombination center in high spatial resolution and measurement speed as well as 7 InP. The introduced simulation tool helps to get a deeper 13 understanding of the experimental data.

To demonstrate 14 the abilities of both methods, a range of previous results on 15 defect characterization were reviewed in this paper. While 21 iron is concentrated at the edge of the sample, BO2 is more 22 distributed in the middle of the wafer. The samples differ in their characte- tronic grade p-doped silicon. This defect cannot be ob- 27 ristic defect levels [21].

Light-Induced Defects in Semiconductors

Samples from solar grade mc-Si show different defect 29 Analyses of semi-insulating 6H-SiC grown with a levels due to their brick height. Comparison between MD- 30 standard process and same process parameters show sever- PICTS spectra and lifetime mappings with MDP on gal- 31 al differing shallow defect levels occurring in the low tem- lium arsenide wafers lead to the assumption that lifetime 32 perature range Fig.

Additionally in samples grown degradation of several areas is caused by the EL5 defect. The ble with the help of the signal sign. Investigations on Fe- 36 activation energies and capture cross sections of the defect doped indium phosphide gave the first direct proof that 37 peaks calculated from the spectra from Fig.

In SI 6H- 38 same range known from the literature []. They are SiC the defect levels known from the literature were de- 39 traced back to omnipresent donor- and acceptor-like im- tected with similar activation energies and capture cross 40 purities and intrinsic defects. A deeper understanding about the appearance of 41 PICTS-signals of different signs with simulations basing 42 on a rate equation system has been accomplished. Dornich, N. Krause, B. Niemietz, and J.

Niklas, Proceed- 56 6H-SiC samples in different temperature ranges. Dornich, T. Hahn, and J.

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